Method of selectively forming local interconnects using design rules

ABSTRACT

The invention includes a method of fabricating a circuit in a manner to place certain structures within a predefined distance of one another. Electrical connections are formed between certain structures of silicon, by annealing a conductive material to cause silicon out-diffusing to form local interconnects. The silicon out-diffusion can be facilitated without a masking step thereby simplifying as well as speeding up the fabrication process. The invention also includes a local interconnect thus formed.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention is related to the fabrication of solid statedevices and, more particularly, to the fabrication of localinterconnects.

2. Description of the Background

Local interconnects are a mechanism used during the fabrication of solidstate devices to make connections between structures, such as betweenthe terminals of transistors, to thereby provide electricalinterconnections between devices. “Local interconnects”, as the nameimplies, refers to interconnects that extend between adjacent devices,or devices that are relatively close to one another, as opposed toconnections extending across a circuit or chip. Connections that areapproximately thirty microns or less are typically referred to as localinterconnects.

One type of circuit where local interconnects are used is a sixtransistor, static random access memory, or 6T SRAM. A circuit diagramof a 6T SRAM cell is illustrated in FIG. 9. In FIG. 9, a 6T SRAM cell 10is coupled between complimentary bit lines 12 and 14 and is coupled to aword line 16. Memory cell 10 includes a load transistor 18, a loadtransistor 20, a drive or pull down transistor 22 and a drive or pulldown transistor 24. Transistors 18, 20, 22 and 24 are coupled togetherto form cross-coupled inverters having a storage node 26 and a storagenode 28.

Transistors 18 and 20 are preferably P-channel transistors, but may bereplaced by polysilicon or other resistors, N-channel depletion modetransistors, or other electrical devices for raising the voltage atstorage nodes 26 and 28 when pull down transistors 22 and 24 are turnedoff, respectively. Pull down transistors 22 and 24 are preferablyN-channel transistors, although other types of transistors such asbipolar transistors or other devices may be utilized.

Storage node 26 is coupled to a pass gate transistor 30 which iscontrolled by word line 16. Storage node 28 is coupled to a pass gatetransistor 32 which is also controlled by word line 16. Pass gatetransistors 30 and 32 are preferably N-channel enhancement modetransistors, although other types of transistors may be utilized.

Transistors 18 and 22 form a first inverter having an input atconductive line 23, and transistors 20 and 24 form a second inverterhaving an input at conductive line 25. Conductive line 23 is coupled tothe output of the second inverter formed by transistors 20 and 24 (i.e.storage node 28). Similarly, conductive line 25 is coupled to the outputof the first inverter formed by transistors 18 and 22 (i.e. storage node26). Thus, transistors 18, 20, 22 and 24 form cross coupled invertershaving outputs at storage nodes 26 and 28.

In operation, cell 10 stores logic signals, or information such as alogic 1 (e.g., VCC) or logic 0 (e.g., ground) on nodes 26 and 28.

With reference to FIG. 10, a top view schematic layout drawing of aportion of cell 10 is shown. Transistors 18, 20, 22 and 24 areillustrated as lateral transistors. Alternatively, transistors 18, 20,22 and 24 can be vertical transistors, or thin film transistors. A gate34 of transistor 22 is coupled to node 28 via polysilicon conductivelines 23 and 36 and a gate 38 of transistor 24 is coupled to node 26 viapolysilicon conductive lines 25 and 40. Lines 23, 36 and 25, 40 crosscouple transistors 18, 20, 22 and 24.

A drain 42 of transistor 22 is coupled to node 26 via a localinterconnect 44, and a drain 46 of transistor 24 is coupled to node 28via a local interconnect 48. A source 50 of transistor 22 is coupled toground, and a source 52 of transistor 24 is coupled to ground.

The local interconnect 44 is electrically coupled to the polysiliconconductive line 25 at node 26. The local interconnect 48 is electricallycoupled to the polysilicon line 23 at the node 28. Local interconnects44 and 48 can be any conductive material such as doped polysilicon,amorphous polysilicon, a single layer of metal (tungsten), or othersubstances. Additionally, local interconnects 44 and 48 can each becoupled to various other items associated with cell 10 or otherintegrated circuit elements. Preferably, local interconnects 44 and 48are utilized to provide additional connections for cell 10.

U.S. Pat. No. 5,831,899 entitled Local Interconnect Structure AndProcess For Six-Transistor SRAM Cell discloses a method of fabricatinglocal interconnects and a local interconnect that is comprised of a gluelayer and a plug layer. An etch is performed to remove the plug layerfrom above the surface of the insulating layer. That leaves the gluelayer for forming the local interconnects.

The particular geometry, and materials described with reference to FIG.10 are shown only as exemplary embodiment. The particular geometry ofcell 10 can be adjusted various ways to provide particular operatingparameters for cell 10. For example, transistors 18, 20, 22 and 24 canbe provided at various orientations to form cell 10. Changes inorientation will change the location of the local interconnects. Designrules are used to determine the size and position of structures within agiven circuit design.

Some of the design rules which must be considered when designing a 6TSRAM cell utilizing local interconnects as well as other types of memorycells and other devices are explained with reference to FIG. 11. In FIG.11, a moat 58 underlies a conducting line 60. These two elements aregenerally separated by a dielectric (not shown). A transistor may beformed from these elements. A conducting line 62 is located outside ofmoat 58. Local interconnect 64 overlies and connects moat region 58 andconducting line 62.

As is well known, design rules must be formulated and applied to anyintegrated circuit design configuration or process. These rules specifyminimum (or maximum) distances for reliability and operation of thedevice. The rules are dependent upon many factors such as thevariability in dimensions of the structures fabricated and thevariability in alignment of one structural material to another. Bothvariabilities depend in turn on fabrication techniques applied andtolerances of the equipment used in fabrication. Illustrated in FIG. 11are five minimum design rules which together dictate the minimum widthto which the configuration shown may be fabricated. Distance “a” is theminimum line width for a polysilicon conducting line for a given deviceand fabrication process. A minimum distance “a” may be, for example, 0.8μm. Note that the distances specified herein for design rules areexemplary only and would vary for different configurations and designprocesses. Distance “b” is the distance required between two conductinglines. A typical minimum distance “b” may be 1.0 μm. Distance “c”represents the minimum allowed distance between a local interconnect andan unrelated conducting line. This distance may be, for example, 0.7 μm.Distance “d” is the distance that the local interconnect 64 overlaps themoat region 58. A typical minimum design rule for distance “d” is 0.8μm. Distance “e” is the distance that the local interconnect 64 overlapsthe conducting line 62. A typical design rule minimum for distance “e”may be 0.6 μm. As can be seen then, the minimum width for thisconfiguration from one conducting line to the other, including the widthof both lines, must be at least a+c+d+e+(a−e). For the exemplary designrule distances given above, that would result in a minimum distance of3.1 μm.

Additionally, it can be seen that the alignment of the localinterconnect 64 over the conducting line is critical to achieve minimumdistance “e” while not extending over the conducting line to therebyincrease the width. Thus, production of local interconnects requires thecareful alignment of a dedicated local interconnect mask.

The drive to make the fabrication process for circuits faster and easierdepends, in part, on the ability to fabricate circuits in a manner thatrequires fewer masking steps. Thus, there is a need for a method offabricating local interconnects without a separate step for aligning andusing a local interconnect mask.

SUMMARY OF THE INVENTION

The invention is a method of fabricating a circuit in a manner to placecertain structures within a predefined distance of one another.Electrical connections are formed between certain structures by asilicon out-diffusion which forms local interconnects. The siliconout-diffusion can be facilitated without a masking step therebysimplifying as well as speeding up the fabrication process.

According to another embodiment of the present invention, a method offabricating local interconnects in a circuit without using a mask todefine the local interconnects begins by fabricating the structures thatare to be connected by a local interconnect within a bridging distanceof one another. A metal layer is formed on top of at least thestructures to be electrically connected together. The layer of metal isheated to cause an out-diffusion of a conductive element from materialadjacent to the deposited metal so as to form electrical connectionsbetween the structures within the bridging distance. In a preferredembodiment of the present invention, the metal is formed on top ofpolysilicon such that the out-diffusion of the conductive elementincludes the out-diffusion of silicon. Residual metal/metal nitrides areremoved from the oxide surface after local interconnect formation, i.e.post silicon out-diffusion and RTP anneal.

The present invention eliminates a masking step which is typicallyrequired to form the local interconnects. The present invention isparticularly useful in the fabrication of a 6T SRAM cell and may be usedon various types of integrated chips which carry more than one type ofmemory and logic on a chip. These advantages and benefits, and others,will be apparent from the Description of the Preferred Embodimenthereinbelow.

BRIEF DESCRIPTION OF THE DRAWINGS

For the present invention to be easily understood and readily practiced,the present invention will now be described, for purpose of illustrationonly and not limitation, in connection with the following Figures,wherein:

FIG. 1 illustrates portions of a substrate upon which transistors andother devices forming portions of an SRAM cell and a DRAM cell can befabricated;

FIG. 2 illustrates the portion of the substrate shown if FIG. 1 afterstructures used for forming transistors have been fabricated;

FIG. 3 illustrates the portion of the substrate shown if FIG. 2 after alayer of dielectric material has been formed and openings forn-polysilicon plugs have been fabricated;

FIG. 4 illustrates the portion of the substrate shown in FIG. 3 aftern-polysilicon plugs have been formed;

FIG. 5 illustrates that portion of the substrate illustrated in FIG. 4after openings for p-polysilicon plugs have been fabricated;

FIG. 6 illustrates the portion of the substrate shown in FIG. 5 afterp-polysilicon plugs have been formed and after a layer of metal has beenformed;

FIG. 7 illustrates the portion of the substrate shown if FIG. 6 after aheat-treated out-diffusion plus a selective wet clean step;

FIG. 8 is a top view looking down on local interconnects formedaccording to the teachings of the present invention;

FIG. 9 is a conventional 6 transistor SRAM cell constructed according tothe teachings of the prior art;

FIG. 10 is a top view looking down on a portion of the circuit shown inFIG. 9;

FIG. 11 illustrates various solid state structures which are laid outaccording to prior art design rules;

FIG. 12 illustrates a memory device incorporating the interconnect ofthe present invention; and

FIG. 13 illustrates a system in which the memory device of FIG. 12 maybe used.

DESCRIPTION OF THE PREFERRED EMBODIMENT

A method of selectively forming local interconnects using design ruleswill now be described in conjunction with the FIGS. 1-7. The reader willunderstand that the process illustrated in FIGS. 1-7 is exemplary only;it is not intended to limit the present invention. The present inventionof selectively forming interconnects using design rules may be appliedusing any process steps in which out-diffusion of a conductive elementfrom surrounding material to form electrical connections can be reliedupon. Thus, the present invention is limited by neither the selectedprocess steps or the device being fabricated.

Recent trends of integrating more than one type of memory and logic on achip has led to some interesting process integration challenges. Forexample, where SRAMs and DRAMs are fabricated on the same chip, carefulconsideration must be given to how the process steps will be integrated.Typically, SRAMs used for chips carrying both SRAM and DRAM cells usefull CMOS 6T SRAM cells. 6T SRAM cells require local interconnects tostrap the inverters. The present invention will be described inconnection with the fabrication of interconnects for an embeddedSRAM/DRAM process although, as previously mentioned, the concepts of thepresent invention are not limited to the described process steps orfabricated structure.

FIG. 1 illustrates a first portion 70 of a substrate 74 in which SRAMcells are to be fabricated and a second portion 72 of substrate 74 inwhich logic and DRAM cells are to be fabricated. A plurality of n wells,two of which 76, 78 are illustrated in FIG. 1, are fabricated uponsubstrate 74 using any known fabrication technique. Thereafter,isolation areas 80, 82, 84, and 86 may be fabricated using, for example,a shallow trench isolation technique. The substrate 74 illustrated inFIG. 1 is now ready for the formation of transistors.

Turning to FIG. 2, a plurality of structures 88, 89, 90, 91, 92 and 93have been fabricated upon portions 70 and 72. Those of ordinary skill inthe art will recognize that a substantial number of process steps havebeen performed to fabricate structures 88-93. Those steps may beperformed in any manner consistent with the devices being fabricated,and typically rely upon the formation of alternating layers ofinsulating and conductive material such as nitride, polysilicon, oxidesand the like. The structures 88-93 may have spacers fabricated on thesides thereof. The structures 88-93 function in conjunction with thesubstrate 74 in a known manner to form operative transistors. As thetransistor formation step does not form a feature of the presentinvention, it is not further described herein.

In FIG. 3, a layer of dielectric 95 has been formed on top of substrate74. Thereafter, the process of n-polysilicon plug formation begins. Aphotoresist may be applied and etched selectively according to ann-polysilicon gate electrode and spacer mask to create openings 96 and98. Thereafter, a layer of n-polysilicon is deposited and etched back todielectric 95 such that openings 96 and 98 are filled with n-polysilicon100 and 101, respectively, as shown in FIG. 4.

Turning now to FIG. 5, additional openings 102 and 104 are created inlayer 95 for the purpose of fabricating p-polysilicon plugs. The methodsteps for opening of layer 95 to create openings 102 and 104 may besimilar to the steps used to create openings 96 and 98. Morespecifically, a layer of photoresist may be applied to the substratefollowed by masking and selective removal of portions of layer 95according to a gate electrode and spacer mask to create openings 102 and104.

A diffusion barrier layer is formed and etched to leave a liner 106within openings 102 and 104. Thereafter, a layer of p-polysilicon isdeposited which, after being etched back, results in p-polysilicon plugs108 and 109 in openings 102 and 104, respectively, as shown in FIG. 6.

FIG. 6 also illustrates a metal layer 111 formed upon the substrate. Themetal layer may be, for example, titanium (Ti) which is deposited orsputtered. The titanium may be pure, or it may be mixed with othermetals such as cobalt or tungsten, or it may be sputtered with inert gassuch as nitrogen. Nitrogen content in the titanium will change how muchsilicon out-diffusion takes place. The substrate is then subjected to anannealing step. The metal layer is chosen such that siliconout-diffuses, or out-migrates, from n-polysilicon plugs 100 and 101 andp-polysilicon plugs 108 and 109 into the adjacent metal layer. Wheredesign rules have placed structures sufficiently close together, theout-diffusion of silicon will cause an electrical interconnection toform a bridge between the two adjacently located structures. Forexample, in FIG. 6, n-polysilicon plug 100 and p-polysilicon plug 108are placed sufficiently close together such that out-diffusion from thesilicon will form a bridge between the two structures. In that manner,design rules can be utilized to place structures which are to beelectrically connected by local interconnects within a bridging distanceof one another. While n-polysilicon plug 100 and p-polysilicon plug 108have been placed close together, i.e., within the bridging distance,structures which are not to be electrically connected by a localinterconnect such as n-polysilicon plug 101 and p-polysilicon plug 109are placed outside of the bridging distance.

Turning now to FIG. 7, the layer 111 becomes a layer of titaniumsilicide (TiSix) 113 as a result of out-diffusion of silicon. A wetcleaning step is performed to selectively remove residual titanium, ortitanium nitride (if annealed in nitrogen ambient) to leave onlytitanium silicide 113 in place. Thus, by separating the n-polysiliconand p-polysilicon plugs by a distance farther than the siliconout-diffusion distance, the distance the silicon will out-migratebecomes the bridging distance.

As an option to the formation of a layer of titanium, a selectivetungsten/titanium/titanium silicide deposition can be performed whichnucleates substantially more on polysilicon than on oxide or BPSG. Theresidual titanium is again wet-etched from the areas of the chip that donot have silicided plugs.

There are several advantages to the present invention. First, by causingthe silicon out-diffusion by the deposition of a uniform layer of metal,or the use of a process which nucleates only on polysilicon, a maskingstep is saved. There are numerous ways of controlling the amount ofsilicon out-diffusion such as the thickness of the titanium or metallayer and the temperature of the anneal. Also, design rules can berelied upon to allow local interconnects to form where desired, butprevent local interconnects from forming where they are not desired.That creates great flexibility allowing the process of the presentinvention to be integrated into many types of fabrication processes usedwith DRAMs.

The process is compatible with silicidation as well as various selectivedeposition processes that selectively nucleate on polysilicon, aspreviously mentioned. That provides additional flexibility inintegrating various process steps. If silicide is not desired on certainportions of the substrate, it can be easily wet-etched in HF using a wetclean and a mask already in use, e.g. DRAM plug/contact mask.

While the present invention has been described in connection withtitanium and polysilicon, other combinations of materials can be usedonce the degree of out-diffusion for various process parameters has beenmeasured. For example, in the present invention, the table hereinbelowsets forth exemplary process parameters and how those process parametersaffect the bridging distance.

Approx. Ti Thickness RTP temp N2 Bridging distance  50-150 A 650 C.-700C. upto 0.2 um +/− 0.05 um 150-300 A 650 C.-700 C. upto 0.3 um +/− 0.05um 150-300 A 700 C.-750 C. upto 0.4 um +/− 0.05 um >300 A >750 C. >=0.4um

Finally, FIG. 8 is a top view looking down on local interconnects formedaccording to the teachings of the present invention. The parameters usedto obtain the results illustrated in FIG. 8 are illustrated in thesecond row of the table.

The local interconnects of the present invention may be used in avariety of devices, including, as shown in FIG. 12, a synchronousdynamic random access memory 110 (“SDRAM”). The SDRAM 110 includes acontrol logic circuit 114, an address decoder 116, and a read/writecircuit 118, all of which are coupled to a memory array 120. As is wellknown in the art, the address decoder 116 receives an address over anaddress bus 122 and provides a decoded address to the memory array 120to select an individual memory cell in the memory array. The read/writecircuit 118 operates to received data over a data bus 124 and providethat data to the memory array 120 during a write operation and toprovide data from the memory array to the data bus during a readoperation.

The SDRAM 110 performs data transfer operations under control of thecontrol logic circuit 114 which receives data transfer commands,including read or write commands, over a control bus 126. In response tothese data transfer commands, the control logic circuit 114 executeseach of the steps required to perform a read or write data transferoperation. The SDRAM 110 also receives a clock signal CLK to control thetiming of various operations. The clock signal CLK is converted tocomplementary clock signals CLK-OUT and CLK-OUT*. The CLK-OUT andCLK-OUT* signals are applied to the control logic circuit 114 to causethe control logic circuit 114 to synchronously execute one or morememory operations twice for each cycle of the CLK signal. Theseoperations are performed at intervals that are spaced substantiallyequally from each other because of the symmetry of the CLK-OUT andCLK-OUT* signals. A clock enable signal CKE enables the clocking of thecontrol logic circuit 114 by the CLK-OUT and CLK-OUT* signals.

FIG. 13 illustrates a computer system 200 containing the SDRAM 110 ofFIG. 12. The computer system 200 includes a processor 202 for performingvarious computing functions, such as executing specific software toperform specific calculations or tasks. The processor 202 includes aprocessor bus 204 that normally includes an address bus, a control bus,and a data bus. In addition, the computer system 200 includes one ormore input devices 214, such as a keyboard or a mouse, coupled to theprocessor 202 to allow an operator to interface with the computer system200. Typically, the computer system 200 also includes one or more outputdevices 216 coupled to the processor 202, such output devices typicallybeing a printer or a video terminal. One or more data storage devices218 are also typically coupled to the processor 202 to allow theprocessor 202 to store data in or retrieve data from internal orexternal storage media (not shown). Examples of typical storage devices218 include hard and floppy disks, tape cassettes, and compact diskread-only memories (CD-ROMs). The processor 202 is also typicallycoupled to cache memory 226, which is usually static random accessmemory (“SRAM”) and to the SDRAM 110 through a memory controller 230.The memory controller 230 normally includes a control bus 236 and anaddress bus 238 that are coupled to the SDRAM 110. A data bus 240 may becoupled to the processor bus 204 either directly (as shown), through thememory controller 230, or by some other means.

While the present invention has been described in combination with anexemplary embodiment thereof, those of ordinary skill in the art willrecognize that many modifications and variations are possible. Aspreviously mentioned, the present invention may be used in combinationwith other processes in the fabrication of other types of devices orstructures. Other types of materials may be used to cause out-diffusionprovided that the out-diffusion process is quantified such that designrules can be established. Such modifications and variations are intendedto fall within the scope of the following claims.

What is claimed is:
 1. A method, comprising: fabricating a circuit in amanner to place certain structures within a predefined distance of oneanother; and forming an electrical connection between said certainstructures by silicon out-diffusion.
 2. The method of claim 1 whereinsaid step of forming an electrical connection includes the steps offorming a layer of metal on top of a layer of polysilicon and annealing.3. The method of claim 2 wherein said layer of metal is formed bysputtering.
 4. The method of claim 2 wherein said layer of metal isformed by sputtering a combination of metals.
 5. The method of claim 2wherein said layer of metal is formed by a deposition process thatnucleates selectively on polysilicon.
 6. The method of claim 5additionally comprising wet etching with an acid according to a mask. 7.The method of claim 2 wherein said step of forming a layer of metalincludes the step of forming a layer of titanium.
 8. The method of claim7 additionally comprising removing residual titanium after theannealing.
 9. The method of claim 2 wherein the length of the electricalconnection is controlled by the thickness of the layer of metal and theannealing parameters.
 10. The method of claim 1 wherein said predefineddistance is approximately 0.4 microns or less.
 11. A method offabricating local interconnects in a circuit in which certain structuresare located within a bridging distance, comprising: forming a layer ofmaterial on top of at least said certain structures; and heating thelayer of material to cause an out-diffusion of silicon so as to formelectrical connections between said certain structures.
 12. The methodof claim 11 wherein said step of forming a layer of material includesthe step of forming a layer of metal on top of a layer of polysilicon.13. The method of claim 12 wherein said layer of metal is formed bysputtering.
 14. The method of claim 12 wherein said layer of metal isformed by sputtering at least two metals.
 15. The method of claim 12wherein said layer of metal is formed by a deposition process thatnucleates selectively on polysilicon.
 16. The method of claim 15additionally comprising wet etching with an acid according to a mask.17. The method of claim 12 wherein said step of forming a layer of metalincludes the step of forming a layer of titanium.
 18. The method ofclaim 17 additionally comprising removing residual titanium after theheating.
 19. The method of claim 11 wherein said bridging distance isdetermined by the thickness of the formed layer and the parameters ofthe heating step.
 20. The method of claim 11 wherein said bridgingdistance is approximately 0.4 microns.
 21. A method of fabricating localinterconnects in a circuit without using a mask to define the localinterconnects, said structures to be locally interconnected beingfabricated within a bridging distance of one another, said methodcomprising: forming a refractory metal layer on top of at least thestructures to be electrically connected together; and heating the layerof refractory metal to cause an out-diffusion of a conductive elementfrom material adjacent to said metal so as to form electricalconnections between said structures within said bridging distance. 22.The method of claim 21 wherein said forming step results in a layer ofmetal being substantially uniformly formed over the circuit.
 23. Themethod of claim 21 wherein said metal is sputtered.
 24. The method ofclaim 21 wherein said metal is sputtered in combination with anothermetal.
 25. The method of claim 21 wherein said forming step results inmetal being deposited selectively in areas where out-diffusion is totake place.
 26. The method of claim 21 wherein said forming stepincludes the step of forming a layer titanium.
 27. The method of claim26 additionally comprising removing residual titanium after the heating.28. The method of claim 21 wherein the bridging distance is determinedby the thickness of the metal layer and the parameters of the heatingstep.
 29. The method of claim 21 wherein the bridging distance isapproximately 0.4 microns.
 30. A method of forming local interconnectsin a circuit in which certain areas of polysilicon to be electrically-connected are located adjacent to one another, comprising: creating alayer of polysilicon; processing the layer of polysilicon to leaveportions of the polysilicon in predetermined areas; forming a layer ofrefractory metal at least on top of the areas of polysilicon; andannealing the circuit until a silicide is formed to electrically connectadjacent areas of polysilicon.
 31. The method of claim 30 wherein saidstep of forming a layer of metal includes the step of forming a layer ofmetal without the use of a mask.
 32. The method of claim 30 wherein saidstep of forming a layer of metal includes the step of forming asubstantially uniform layer of at least titanium by sputtering.
 33. Themethod of claim 32 additionally comprising removing residual titanium.34. The method of claim 30 wherein said step of forming a layer of metalincludes the step of selectively forming a layer of metal by depositinga metal with a deposition technique that nucleates selectively onpolysilicon.
 35. The method of claim 34 additionally comprising wetetching with an acid according to a mask.
 36. A method of forming localinterconnects in a six transistor memory circuit in which ann-polysilicon plug and a p-polysilicon plug are electrically connectedtogether, comprising: forming a layer of n-polysilicon; processing thelayer of n-polysilicon to create an n-polysilicon plug; forming a layerof p-polysilicon; processing the layer of p-polysilicon to create ap-polysilicon plug; forming a layer of metal on top of at least then-polysilicon and the p-polysilicon plugs; and annealing the circuituntil a silicide is formed between the n-polysilicon and p-polysiliconplugs.
 37. The method of claim 36 wherein said step of forming a layerof metal includes the step of forming a layer of metal without the useof a mask.
 38. The method of claim 36 wherein said step of forming alayer of metal includes the step of forming a substantially uniformlayer of at least titanium by sputtering.
 39. The method of claim 38additionally comprising removing residual titanium.
 40. The method ofclaim 36 wherein said step of forming a layer of metal includes the stepof selectively forming a layer of metal by depositing a metal with adeposition technique that nucleates selectively on polysilicon.
 41. Themethod of claim 40 additionally comprising wet etching with an acidaccording to a mask.
 42. A method of forming local interconnects on asubstrate having both an SRAM and a DRAM, comprising: fabricatingn-polysilicon plugs and p-polysilicon plugs in both the SRAM and theDRAM, certain of said plugs in said SRAM being within a bridgingdistance and said plugs in said DRAM being outside of said bridgingdistance; forming a layer of metal on the substrate; and annealing thesubstrate to cause a silicide to form, said silicide forming a bridgebetween said plugs that are within said bridging distance.
 43. Themethod of claim 42 wherein said step of forming a layer of metalincludes the step of forming a layer of metal without the use of a mask.44. The method of claim 42 wherein said step of forming a layer of metalincludes the step of forming a substantially uniform layer of at leasttitanium by sputtering.
 45. The method of claim 44 additionallycomprising removing residual titanium.
 46. The method of claim 42wherein said step of forming a layer of metal includes the step ofselectively forming a layer of metal by depositing a metal with adeposition technique that nucleates selectively on polysilicon.
 47. Themethod of claim 46 additionally comprising wet etching with an acidaccording to a mask.
 48. The method of claim 42 wherein said bridgingdistance is approximately 0.4 microns.